董红

论文：

1. Lingcheng Zheng, Lingxue Diao, Rui Zhang, Xingjun Sun, Qiaoya Lv, Feifei Chen, Yan Li, Hui Liu, Xinghua Zhang, Zunming Lu, Weihua Wang, Feng Lu, Hong Dong, Hui Liu, Luyan Li, Rongkun Zheng, Yahui Cheng, Design and In Situ Growth of Cu2O‐Blended Heterojunction Directed by Energy‐Band Engineering: Toward High Photoelectrochemical Performance, Advanced Materials Interfaces, 9, 2101690, 2022.

2. Ze Feng, Yitong Wang, Jilong Hao, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Shengkai Wang, Hui Liu, Hong Dong* Designing high k dielectric films with LiPON–Al2O3 hybrid structure by atomic layer deposition , Chinese Physics B, 31, 057701, 2022.

3. Haodong Hu, Ze Feng, Yibo Wang, Yan Liu, Hong Dong* Yue-Yang Liu, Yue Hao, Genquan Han*,The role of surface pretreatment by low temperature O2 gas annealing for β-Ga2O3 Schottky barrier diodes, Applied Physics Letters, 120, 073501, 2022.

4. Ze Feng, Yong Sun, Yuandong Sun, Xiao Chen, Yang Shen, Rong Huang, Zhiyun Li, Hu Wang, Ding Ding, Yue Peng, Yitong Wang, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Yi Cui, An Dingsun, Genquan Han, Hui Liu* Hong Dong* Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al2O3 Interface Induced by Titanium Layer, Advanced Materials Interfaces, 9, 2101238,2022.

5. Rui Zhang, Xingjun Sun, Lingcheng Zheng, Lingxue Diao, Feifei Chen, Yan Li, Shuli Wang, Yajiang Wang, Weihua Wang, Feng Lu, Hong Dong, Hui Liu* Yahui Cheng* Organic Photocathode Supported by Copper Nanosheets Array for Overall Water Splitting, Chemistry–A European Journal, 28, e202103495,2022.

6. Ze Feng, Xiaoye Qin, Xiao Chen, Zhiyun Li, Rong Huang, Yang Shen, Ding Ding, Yitong Wang, Meiyi Jing, Yi Cui, An Dingsun, Hui Liu, Hong Dong* Robert M Wallace* In situ isotope study of indium diffusion in InP/Al2O3 stacks, Applied Physics Letters, 120, 032103, 2022.

7. Lingxue Diao, Lingcheng Zheng, Rui Zhang, Feifei Chen, Yan Li, Weihua Wang, Feng Lu, Liying Chen, Hui Liu, Hong Dong* Yahui Cheng* Titanium Nitride Protected Cuprous Oxide Photocathode for Stable and Efficient Water Reduction, ACS Applied Energy Materials, 5, 770, 2021.

8. Meiyi Jing, Tongkang Lu, Yong Sun, Xiaoliang Zhao, bZe Feng, Yitong Wang, Hui Liu, Wei-Hua Wang, Feng Lu, Yahui Cheng, Genquan Han, Hong Dong* Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al2O3, Vacuum, 193, 110555, 2021.

9. Ze Feng, Yue Peng, Yang Shen, Zhiyun Li, Hu Wang, Xiao Chen, Yitong Wang, Meiyi Jing, Feng Lu, Weihua Wang, Yahui Cheng, Yi Cui, An Dingsun, Genquan Han*, Hui Liu*, Hong Dong*
Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide, Advanced Electronic Materials,7, 2100414 , 2021.

10. Maokun Wu, Jintao Cui, Wen Yang, Hongliu Dai, Hong Dong, Yahui Cheng, Zhanglian Hong, Weichao Wang, Feng Lu, Hui Liu, Shuhui Sun, Wei-Hua Wang, Two-Dimensional Protective Layers of MX3 to Stabilize Lithium and Sodium Metal Anodes, ACS Applied Energy Materials, 4, 8653, 2021.

11. Rui Zhang, Xingjun Sun, Lingcheng Zheng, Hui Liu, Xinghua Zhang, Zunming Lu, Weihua Wang, Feng Lu, Hong Dong, Rongkun Zheng, Yahui Cheng, Light-controlled convergence of photogenerated carriers and reactants to boost photocatalytic performance, Journal of Catalysis, 400, 1, 2021.

12. Yue Peng, Genquan Han, Fenning Liu, Wenwu Xiao, Yan Liu, Ni Zhong, Chungang Duan, Ze Feng, Hong Dong, Yue Hao, Ferroelectric-like behavior originating from oxygen vacancy dipoles in amorphous film for non-volatile memory, Nanoscale Research Letters, 15, 1, 2020.

13. Maokun Wu, Baojuan Xin, Wen Yang, Boyan Li, Hong Dong, Yahui Cheng, Weichao Wang, Feng Lu, Wei-Hua Wang, Hui Liu, Metallic Monolayer Ta2CS2: An Anode Candidate for Li+, Na+, K+, and Ca2+ Ion Batteries, ACS Applied Energy Materials, 3, 10695, 2020.

14. Yue Peng, Wenwu Xiao, Fenning Liu, Yan Liu, Genquan Han, Nan Yang, Ni Zhong, Chungang Duan, Chen Liu, Yichun Zhou, Ze Feng, Hong Dong, Yue Hao, Non-volatile field-effect transistors enabled by oxygen vacancy-related dipoles for memory and synapse applicatio s, IEEE Transactions on Electron Devices, 67, 3632, 2020.

15. Pan Liu, Maokun Wu, Luyan Li, Xiaoguang Luo, Yahui Cheng, Hong Dong, Haijun Chen, Weichao Wang, Hui Liu, Wei-Hua Wang, Feng Lu, Kyeongjae Cho, Ideal two-dimensional molecular sieves for gas separation: Metal trihalides MX3 with precise atomic pores, Journal of Membrane Science, 602, 117786, 2020.

16. Maokun Wu, Pan Liu, Luyan Li, Hong Dong, Yahui Cheng, Haijun Chen, Weichao Wang, Hui Liu, Feng Lu, Wei-Hua Wang, Kyeongjae Cho,Ideal two-dimensional solid electrolytes for fast ion transport: metal trihalides MX 3 with intrinsic atomic pores, Nanoscale, 12, 7188, 2020.

17. Deqiang Feng, Jiangtao Qu, Rui Zhang, Xingjun Sun, Lingcheng Zheng, Hui Liu, Xinghua Zhang, Zunming Lu, Feng Lu, Weihua Wang, Hong Dong, Yahui Cheng, Rongkun Zheng, ITO regulated high-performance n-Si/ITO/α-Fe2O3 Z-scheme heterostructure towards photoelectrochemical water splitting, Journal of Catalysis, 381, 501, 2020.

18. Yongsun, Jinxin Chen, Tao Wang, Xinglu Wang, Ze Feng, Chen Liu, Jiali Zhao, Feng Lu, Yahui Cheng, Wei-Hua Wang, Weichao Wang, Hui Liu, Kyeongjae Cho, Rui Wu, Jiaou Wang*, Hongliang Lu*, Hong Dong*, The photoemission study of InSb/HfO2 stacks upon N2 rapid thermal annealing, Vacuum, 169, 108815, 2019.

19. Ze Feng, Yue Peng, Huan Liu, Yong Sun, Yitong Wang, Meng Meng, Hui Liu, Jiaou Wang, Rui Wu, Xinglu Wang, Kyeongjae Cho, Genquan Han*, Hong Dong*, The band structure change of Hf0.5Zr0.5O2/Ge system upon post deposition annealing, Applied Surface Science, 488, 778-782, 2019.

20. Maokun Wu, Pan Liu, Baojuan Xin, Luyan Li, Hong Dong,  Yahui Cheng,  Weichao Wang, Feng Lu1,  Kyeongjae Cho,  Wei-Hua Wang, and Hui Liu, Improved carrier doping strategy of monolayer MoS2 through two-dimensional solid electrolyte of YBr3, Applied Physics Letters114(17),171601, 2019.

21. Lingcheng Zheng, Jie He, Deqiang Feng, Rui Zhang, Hui Liu, Xinghua Zhang, Zunming Lu, Weichao Wang, Wei-Hua Wang, Feng Lu, Hong Dong, Yahui Cheng, Luyan Li, Rongkun Zheng, and Hui Liu, Magnetoresistance Crossover in Cobalt/Poly(3-hexylthiophene,2,5-diyl) Hybrid Films Due to the Interface Effect, Physical Review Applied11(3),034024, 2019.

22. Jie He, Lingcheng Zheng, Deqiang Feng, Mengyin Liu, Dawei Shao, Zunming Lu, Xinghua Zhang, WeihuaWang, Weichao Wang, Feng Lu, Hong Dong, Yahui Cheng, Hui Liu, HuiLiu, RongkunZheng, Interfacial effects on the microstructures and magnetoresistance of Ni 80 Fe 20 /P3HT/Fe organic spin valves, Journal of Alloys and Compounds, 769, 991-997, 2018.

23. Ya-Wei Huan, Xing-Lu Wang, Wen-Jun Liu, Hong Dong, Shi-Bing Long, Shun-Ming Sun, Jian-Guo Yang, Su-Dong Wu, Wen-Jie Yu, Ray-Hua Horng, Band alignment of indium-gallium-zinc oxide/β-Ga2O3 heterojunction determined by angle-resolved X-ray photoelectron spectroscopy, Japanese Journal of Applied Physics 57(10),100312, 2018.

24. Xinglu Wang, Xiaoye Qin, Wen Wang, Yue Liu, Xiaoran Shi, Yong Sun, Chen Liu, Jiali Zhao, Guanhua Zhang, Hui Liu, Kyeongjae Cho, Rui Wu, Jiaou Wang, Sen Zhang, Robert M. Wallace, Hong Dong*, “Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing”, Applied Surface Science, 443，567-574，2018.

25. Maokun Wu, Xiaolong Yao, Yuan Hao, Hong Dong, Yahui Cheng, Hui Liu, Feng Lu, Weichao Wang, Kyeongjae Cho, Wei-Hua Wang, “Electronic structures, magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2”, Physics Letter A, 382, 111-115, 2018.

26. Jie He,Yahui Cheng, TianzhaoWang, Deqiang Feng, Lingcheng Zheng, Dawei Shao, Weichao Wang, Weihua Wang, Feng Lu, Hong Dong, Rongkun Zheng, Hui Liu, Enhanced photocatalytic performances and magnetic recovery capacity of visible-light-driven Z-scheme ZnFe2O4 /AgBr/Ag photocatalyst, Applied Surface Science440, pp. 99-106, 2018.

27. Yanyan Gao, Jianping Xu*, Shaobo Shi, Hong Dong, Yahui Cheng, Chengtai Wei, Xiaosong Zhang, Shougen Yin, Lan Li*, TiO2 Nanorod Arrays Based Self-Powered UV Photodetector: Heterojunction with NiO Nanoflakes and Enhanced UV Photoresponse, ACS Applied Materials and Interfaces10(13), pp. 11269-11279, 2018.

28. Hong Dong, Cheng Gong, Rafik Addou, Stephen McDonnell, Angelica Azcatl, Xiaoye Qin, Weichao Wang, Wei-Hua Wang, Christopher L Hinkle, and Robert M. Wallace “Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy”, ACS Applied Materials & Interfaces, 9(44), 38977-38983, 2017.

29. Xiaoran Shi, Xinglu Wang, Yong Sun, Chen Liu, WeiHua Wang, Yahui Cheng, Weichao Wang, Jiaou Wang, Kyeongjae Cho, Feng Lu, Hui Liu and Hong Dong*, “Interface chemistry study of InSb/Al2O3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy”, Applied Surface Science, 425,932-940, 2017.

30. Xinglu Wang, Yanfei Zhao, Rong Huang, Fangsen Li, Xiaoming Lu, Yang Shen, Hu Wang, Dawei Shao, Baimei Tan, Jian Zhang, Xinjian Xie, An Dingsun*, and Hong Dong*, “Thermal Stability Study of GaP/high-k Dielectrics Interfaces”, Advanced Materials Interfaces, 4, 1700609 (1-8), 2017.

31. Yunna Zhu, Xinglu Wang, Chen Liu, Wei-Hua Wang, Yahui Cheng, Weichao Wang, Jiaou Wang, Shengkai Wang, Hui Liu*, Hongliang Lu* and Hong Dong*, “Elemental diffusion study of Ge/Al2O3 and Ge/AlN/Al2O3 interfaces upon post deposition annealing”, Surfaces and Interfaces, 9, 51-57, 2017.

32. Dawei Shao, Yahui Cheng,* Jie He, Deqiang Feng, Lingcheng Zheng, Lijun Zheng, Xinghua Zhang, Jianping Xu, Weichao Wang, Weihua Wang, Feng Lu, Hong Dong, Luyan Li, Hui Liu, Rongkun Zheng, and Hui Liu, “A Spatially Separated Organic−Inorganic Hybrid Photoelectrochemical Cell for Unassisted Overall Water Splitting” ACS Catalyst, 7, 5308−5315, 2017.

33. M. Liu, L. Chen, X. Wang, Y. Cheng, F. Lu, W-H Wang, J. Yang, X. Du, J. Zhu, H. Liu, H. Dong*, W. Wang*, “A Rational Design of Heterojunction Photocatalyst CdS Interfacing with One Cycle of ALD Oxide”, Journal of Materials Science and Technology, 32, 489, 2016.

34. H. Dong, R. Galatage, W. Cabrera, B. Brennan, X. Qin, J. Kim, C. L. Hinkle, Y. Chabal, and R. M. Wallace, “In situ study of Si interfacial passivation layer between high-k dielectrics and InP”. ACS Applied Materials and Interfaces, 6, 7340-7345，2014.

35. H. Dong, B. Brennan, D. Zhernokletov, J. Kim, C. L. Hinkle, and R. M. Wallace, “In situ study of Atomic layer deposition of HfO2 on InP (100)”, Applied Physical Letters, 102, 171602 (1-4), 2013.

36. H. Dong, W. Cabrera, R.V. Galatage, S. KC, B. Brennan, X. Qin, S. McDonnell, D. Zhernokletov, C. L. Hinkle, K. Cho, Y. J. Chabal, and R. M. Wallace, “Indium diffusion through high-k dielectrics in high-k/InP stacks”, Applied Physics Letters, 103, 061601 (1-4), 2013.

37. H. Dong, B. Brennan, X. Qin, D. Zhernokletov, C. L. Hinkle, J. Kim, and R. M. Wallace, “In situ study of atomic layer deposition of Al2O3 on GaP (100)”, Applied Physics Letters, 103, 121604 (1-4), 2013.

38. H. Dong, Santosh KC, W. Cabrera, A. Zacatzi, X. Qin, B. Brennan, C. L. Hinkle, Y. Chabal, K. Cho, and R. M. Wallace, “In situ study of e-beam evaporation of Al and Hf on native oxide InP”, Journal of Applied Physics, 114, 203505 (1-6), 2013.

39. H. Dong, Santosh KC, X. Qin, B. Brennan, S. McDonnell, D. Zhernokletov, C. L. Hinkle, J. Kim, K. Cho, and R. M. Wallace, “In situ study of the role of substrate temperature during atomic layer deposition of HfO2 on InP”, Journal of Applied Physics, 114, 154105 (1-5), 2013.

40. H. Dong, J. L. Edmondson, R. L. Miller, A. R. Chourasia, “Chemical reactivity at Fe/CuO interface studied in situ by X-ray photoelectron spectroscopy”, Vacuum, 101, 27, 2014.

41. Santosh KC, H. Dong, R. C. Longo, W. Wang, K. Xiong, R. M. Wallace, and K. Cho, “Electronic properties of InP(100)/HfO2 (001) interface: band offset and oxygen dependence”, Journal of Applied Physics, 115, 023703，2014.

42. X. Qin, H. Dong, J. Kim, and R. M. Wallace, “A crystalline oxide passivation for Al2O3/AlGaN/GaN”, Applied Physics Letters, 105, 141604, 2014.

43. A. Azcatl, S. McDonnell, Santosh KC, X. Peng, H. Dong, X. Qin, R. Addou, G. I. Mordi, N. Lu, J. Kim, K. Cho, and R. M. Wallace, “MoS2 functionalization for ultrathin atomic layer deposited dielectrics” Applied Physics Letters, 104，111601，2014.

44. W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, E. O’Connor, P. K. Hurley, R. M. Wallace, Y. J. Chabal, “Diffusion of InGaAs elements through hafnium oxide during post deposition annealing”, Applied Physics Letters, 104, 011601, 2014.

45. C. Gong, S. McDonnell, X. Qin, A. Azcatl, H. Dong, Y. Chabal, K. Cho, R. M. Wallace, “Realistic Metal-Graphene Contact Structures”, ACS Nano, 8, 642, 2013.

46. W. Cabrera, B. Brennan, H. Dong, T. P. O’Regan, I. M. Povey, S. Monaghan, É O’Connor, P. K. Hurley, R. M. Wallace, and Y. J. Chabal, “Diffusion of In0.53Ga0.47As elements hafnium oxide during post deposition annealing, Applied Physics Letters, 104, 011601, 2013.

47. X. Qin, H. Dong, B. Brennan, A. Azacatl, J. Kim, and R. M. Wallace, “Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN”, Applied Physics Letters, 103, 221604, 2013.

48. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, “Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors”, Applied Physics Letters, 102, 132903，2013.

49. D. M. Zhernokletov, H. Dong, B. Brennan, M. Yakimov, V. Tokranov, S. Oktyabrsky, J. Kim, R. M. Wallace, “Surface and interfacial reaction study of half cycle atomic layer deposited HfO2 on chemically treated GaSb surfaces”, Applied Physics Letters, 102, 131602，2013.

50. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, M. Yakimov, V. Tokranov, and S. Oktyarsky, “Investigation of arsenic and antimony capping layers, and half cycle reactions during atomic layer deposition of Al2O3 on GaSb”, Journal of Vacuum Science and Technology A, 31, 060602，2013.

51. X. Qin, B. Brennan, H. Dong, J. Kim, C. L. Hinkle, and R. M, Wallace, “In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N”, Journal of Applied Physics, 113, 244102，2013.

52. B. Brennan, S. McDonnell, D. Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ Studies of III-V Surfaces and High-K Atomic Layer Deposition”, Solid State Phenomena, 195, 90，2013.

53. Santosh KC, W. Wang, H. Dong, K. Xiong, R. C Longo, R. M. Wallace, K. Cho, “First principles study on InP (001) (2×4) surface oxidation”, Journal of Applied Physics, 113, 103705，2013.

54. S. McDonnell, B. Brennan, A. Azcatl, L. Lu, H. Dong, C. Buie, J. Kim, C. L. Hinkle, M. Kim, and R. M. Wallace, “HfO2 on MoS2 by atomic layer deposition: Adsorption Mechanism and Scalability”, ACS Nano, 7, 10354, 2013.

55. D. M Zhernokletov, P. Laukkanen, H. Dong, R. V. Galatage, B. Brennan, M. Yakimov, V. Tokranov, J. Kim, S. Oktyabrsky, R. M. Wallace, “Surface and interfacial reaction study of InAs (100)-crystalline oxide interface”, Applied Physics Letter, 102, 211601，2013.

56. D. Dick, J. Veyan, R. Longo, S. McDonnell, J. Ballard, X. Qin, H. Dong, J. Owen, J. Randall, R. M. Wallace, K. Cho, Y. Chabal, “Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth”, The Journal of Physical Chemistry C, 118, 482，2013.

57. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “Optimization of the ammonium sulfide (NH4)2S passivation process on InSb (111) A”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 30, 04E103，2012.

58. D. M. Zhernokletov, H. Dong, B. Brennan, J. Kim, R. M. Wallace, “In situ X-ray photoelectron spectroscopy characterization of Al2O3/InSb interface evolution from atomic layer deposition”, Applied Surface Science, 258, 5522，2012.

59. B. Brennan, X. Qin, H. Dong, J. Kim, R. M. Wallace, “In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN”, Applied Physics Letters, 101, 211604，2012.

60. B. Brennan, D. M Zhernokletov, H. Dong, C. L. Hinkle, J. Kim, R. M. Wallace, “In situ surface pre-treatment study of GaAs and In0.53Ga0.47As”, Applied Physics Letters, 100, 151603，2012.

61. D. R. Gajula, D. W. McNeill, B. E. Coss, H. Dong, S. Jandhyala, J. Kim, R. M. Wallace, B. M. Armstrong, “Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, 100, 192101，2012.

62. S. McDonnell, H. Dong, J. M. Hawkins, B. Brennan, M. Milojevic, F. S. Aguirre-Tostado, D. M. Zhernokletov, C. L. Hinkle, J. Kim, R. M. Wallace, “Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems”, Applied Physics Letters, 100, 141606，2012.

63. B. Brennan, H. Dong, D. M. Zhernokletov, J. Kim, R. M. Wallace, “Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces”, Applied Physics Express, 4, 5701，2011.

64. J. F. Veyan, H. Choi, M. Huang, R. C. Longo, J. B. Ballard, S. McDonnell, M. P. Nadesalingam, H. Dong, I. S Chopra, J. HG Owen, W. P. Kirk, J. N Randall, R. M .Wallace, K. Cho, Yves J Chabal, “Si2H6 Dissociative Chemisorption and Dissociation on Si (100) (2×1) and Ge (100)-(2×1)”, The Journal of Physical Chemistry C, 115, 24534，2011.

65. R. V. Galatage, H. Dong, D. M. Zhernokletov, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel, "Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors," Applied Physics Letters, 99, 172901，2011.

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